| 摘要 |
A method and a structure for isolating a device through an ion injection are provided to simplify a device isolation process by forming an isolation region between semiconductor devices after destroying a lattice structure of a semiconductor substrate through a high energy ion injection process. A photoresist is patterned in order to define an active region(110) and a field region(120) on a top part of a semiconductor substrate(100). An ion is selectively injected in the field region. The photoresist is removed by a photoresist strip process. A MOS transistor is formed on the active region. The field region is formed in an edge of the active region. The field region is made of a destroyed lattice structure layer.
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