| 摘要 |
<p>A semiconductor device is provided to suppress stress generated on the device such as the transistor when applying external force to a bend of a semiconductor by forming a reinforcing layer on the transistor. A part of a semiconductor layer(106) is formed by being inserted between a reinforcement film(103) and a second reinforcement film(109). The reinforcement film is formed in order to cover the semiconductor film, and an insulating layer(110) is formed in order to cover the gate insulating layer(107) and the second reinforcement film. The second conductive film(111) is formed on the insulating layer, and the semiconductor film comprises a channel forming region(106a) and an impurity region(106b). The first reinforcing film is formed to overlap the semiconductor film comprising the thin film transistor(100a,100b) and the insulating layer(104).</p> |
