| 摘要 |
A method for forming a multilayer wiring of a semiconductor device is provided to prevent the lowering of uniformity in an oxide film by performing an etch-back process and an additional deposition process in the oxide layer in case of the double deposition of the oxide film. When a double deposition phenomenon is generated in a process of depositing an oxide film(112') for a multilayer wiring of a semiconductor device, the etch back process is performed in the oxide film. The additional deposition process is performed in the oxide film. The etch back process is progressed before a polishing process. The polishing process is a chemical mechanical polishing process.
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