| 摘要 |
A wafer level package integration and a method thereof are provided to reduce a process temperature limit due to a WLRDL(Wafer Level ReDistribution Layer) process by forming a WLRDL on a dummy substrate before mounting a semiconductor substrate. A first passivation layer(32) is formed on a substrate(30). A first conductive layer(34) is formed on the first passivation layer. A second passivation layer(36) is formed on the first conductive layer and the first passivation layer. A second conductive layer(38) is formed on the second passivation layer. A third passivation layer(40) is formed on the second conductive layer. A third conductive layer(42) is contacted with the second conductive layer. A fourth passivation layer(44) is formed on the third conductive layer and the third passivation layer. |
