发明名称 SUBSTRATE TREATMENT DEVICE AND DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a device which can limit a temperature effect when a high working speed is used for a load lock. <P>SOLUTION: This substrate treatment device has a vacuum chamber and the load lock for gas removal. The load lock has a support table in order to support a substrate. A cover plate is provided in the load lock and the cover plate has a lower surface facing an upper surface of the support table. An opening is formed in the lower surface of the cover plate and enables gas removal from an upper part of the substrate in the substantially perpendicular direction to the lower surface. In one embodiment, a gas removal structure with the opening in the upper surface of the support table is provided and gas pressure between the upper surface of the support table and the substrate is reduced through the opening in an early stage to predetermined pressure lower than simultaneous load lock pressure in the remainder of the load lock. When the load lock pressure in the remainder of the load lock is reduced to pressure lower than the predetermined pressure, the gas pressure between the upper surface of the support table and the substrate is reduced together with the load lock pressure in the remainder of the load lock. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009124142(A) 申请公布日期 2009.06.04
申请号 JP20080286357 申请日期 2008.11.07
申请人 ASML NETHERLANDS BV 发明人 VISSER RAIMOND;HENNUS PIETER RENAAT MARIA;FRANSSEN JOHANNES HENDRIKUS GERTRUDIS;VERHAGEN ERWIN THEODORUS JACOBA
分类号 H01L21/027;G03F7/20;H01L21/683 主分类号 H01L21/027
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