| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase shift mask blank giving a photomask of high pattern precision, and a method of manufacturing a phase shift mask with a pattern formed on the phase shift mask blank. <P>SOLUTION: This phase shift mask blank having 1.0μm or less of warpage after depositing a phase shift film is manufactured by depositing the phase shift film comprising a backing layer and a surface layer on a substrate transparent to an exposure light and having 0.5μm or less of surface warpage, and comprising a metal silicide oxide, a metal silicide nitride or metal silicide oxynitride, under the condition that sputtering pressure is 0.1 to 0.5 Pa when forming a surface layer, and that sputtering pressure when forming the backing layer is 0.5 Pa or more and 1.2 times or more the sputtering pressure at the surface layer formation, by sputtering using a metal silicide target. A change in the warpages before and after the film formation is small. The phase shift mask blank has thereby a low surface warpage, a pattern dimension is suppressed from being changed due to the warpage change, by forming the pattern in the phase shift mask blank, and the precise phase shift mask is obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
