| 摘要 |
The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO2 thin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiO2 thin film formed by coating; a gate electrode; a gate insulating layer of a SiO2 thin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiO2 thin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.
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