| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that the conventional semiconductor integrated circuits become too large in circuit scale. <P>SOLUTION: The semiconductor integrated circuit has: drive circuits DRV1-DRVn for respectively driving the word lines WL1-WLn either on a first voltage VPP or a second voltage VSS according to the control signal CNT; a plurality of gate transistors TTr with their gates connected to one of the word lines WL1-WLn to switch the connection state of the storage nodes SN and the bit lines DT, DB based on the voltage supplied to the word line WL connected to the gate; and a control circuit 12 for controlling data writing or reading to the storage node SN through one of the gate transistors TTr. The gate oxide of the gate transistors TTr is thinner than that of the transistors constituting the drive circuits DRV1-DRV3. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
