| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dry etching system having a function of intermediate length measurement for producing a photomask in which the pattern line width of a dry-etched metal film always satisfies dimensional specifications. <P>SOLUTION: The system is equipped with a scanning electron microscope 30 for measuring a pattern line width in a vacuum chamber 20 for dry etching so as to carry out intermediate length measurement of a pattern line width while a dry-etched photomask substrate 10 is mounted in the vacuum chamber for dry etching. The system has a function of verifying the pattern line width with the dimensional specification; and if the line width fails the specification, the system has a function of automatically performing feedback and continuing the dry etching in the vacuum chamber for dry etching. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
