| 摘要 |
PROBLEM TO BE SOLVED: To reduce both a light leakage current and diffusion of impurities to a channel region e.g. when a pixel pitch is narrowed. SOLUTION: Since a semiconductor layer (1a) extends along an oblique direction (D) obliquely crossing a direction X and a direction Y in a pixel area (72g) on a TFT array substrate (10), a channel length direction in which a channel area (1a') of the semiconductor layer (1a) is extended along the oblique direction (D). In such the semiconductor layer (1a), the semiconductor layer can be formed so as to be superposed on a pixel electrode (9a) and to be long extended relatively along the channel length direction as compared with the case that the semiconductor layer is formed so that the channel length direction is extended along the direction X or the direction Y. COPYRIGHT: (C)2009,JPO&INPIT
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