| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dummy wafer which has a high corrosion resistance against a cleaning gas and an etching gas which are highly corrosive, and can be used for a long period. <P>SOLUTION: The wafer has a rare-earth oxide-sprayed film on the uppermost layer of a substrate. The wafer can prevent reduction in thickness of a semiconductor wafer in cleaning and stabilizing a plasma etching apparatus and a plasma deposition apparatus, and can improve its service life, if used as a dummy wafer, because it has high film hardness. <P>COPYRIGHT: (C)2009,JPO&INPIT |
