| 摘要 |
PROBLEM TO BE SOLVED: To remove polishing damages on a surface of a GaN substrate obtained from an ingot. SOLUTION: The invention relates to a method for treatment of a polished GaN substrate surface, including heating the surface in an atmosphere containing trimethyl gallium, ammonia and hydrogen. Preferably, the trimethyl gallium feeding rate is 150μmol/min or higher, the ratio of trimethyl gallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000°C to 1,250°C. In addition, the temperature of the surface treatment is set to be equal to or higher than that of the following GaN growth, and the trimethyl gallium feeding rate is lower than that of the growth procedure. RMS of surface roughness is 1.3 nm or less, and the substrate with a good step condition can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
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