| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which prevents electrostatic breakdown due to a surge voltage applied to a power line or a ground line and preventing noise interference between a digital circuit and an analog circuit. SOLUTION: A first static damage protective diode D1 and a first static damage protective bipolar transistor T1 are disposed in a first island area 105. As a result, when a surge voltage is applied to the first ground line 102, the first static damage protective diode D1 and the first static damage protective bipolar transistor T1 turn on to protect a digital circuit 100 from static damage. A first isolation layer SP1 is set in contact with the first ground line 102 at a position P1 that is closer to a first ground pad 101 than the digital circuit 100 is. A second isolation layer SP2 is set in contact with a second ground line 202, at a position P2 that is closer to a second ground pad 201 than to an analog circuit 200. This prevents noise interference between the digital circuit 100 and the analog circuit 200. COPYRIGHT: (C)2009,JPO&INPIT
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