| 摘要 |
<p>A method for forming an electrode of a semiconductor device is provided to prevent nitride on the surface of a tungsten film by process a deposition of capping nitride by two steps. In method for forming an electrode of a semiconductor device, a first pattern is molded on a semiconductor substrate(200), and the first pattern comprises a tungsten film(250) and a hard mask(260). The capping layer is deposited and surrounds the first pattern, and at this time, the temperature for deposition is different at the first and the second step. The first pattern is formed by laminating a gate insulating layer(210), a polysilicon layer(220), and a tungsten film and hard mask successively.</p> |
