| 摘要 |
A method of forming transistor in a semiconductor device is provided to reduce the number of the reticles of the process of manufacturing semiconductor and the necessary cost of the process. The method of forming the transistor of the semiconductor device comprises a step of preparing the semiconductor substrate(100), a step of performing the first ion injection process, and a step of performing the secondary ion implantation process. The step of preparing the semiconductor substrate is performed in order to prepare for the semiconductor substrate having three region frames(LVN, HVN1, HVN2). The step of performing the first ion injection process is performed to inject impurity ions into the first area of the semiconductor substrate. The first ion injection process controls the threshold voltage of the first area. The step of performing the secondary ion implantation process is performed to inject impurity ions into the third region of the semiconductor substrate. The secondary ion implantation process controls the threshold voltage of the third region.
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