发明名称 NON VOLATILE MEMORY DEVICE AND PAGE BUFFER AND METHOD OF OPERATING THE SAME
摘要 A non-volatile memory device, a page buffer, and an operating method of the non-volatile memory device are provided to previously decide on a program state of an OTP(One Time Programmable) memory before data storage, thereby improving efficiency of the OTP memory. A non-volatile memory device(100) comprises as follows. Plural page buffer circuits comprise verifying units, respectively. The verifying units output verification signals by confirming a program state of a memory cell. A program decider(170) generates a decision signal for deciding whether to progress a program in response to the verification signals. A controller(160) outputs a program command control signal. The controller controls the page buffer circuits according to the decision signal. The pager buffer circuits program data on the memory cell under control of the controller.
申请公布号 KR20090055798(A) 申请公布日期 2009.06.03
申请号 KR20070122623 申请日期 2007.11.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SON, JI HYE;KIM, DUCK JU
分类号 G11C16/06;G11C16/10;G11C16/34 主分类号 G11C16/06
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