| 摘要 |
A semiconductor light emitting device and a fabrication method thereof are provided to remove a semiconductor defect by blocking a potential transmitted to the semiconductor layer from a substrate to be separated by forming an erasing layer between the substrate to be separated and the semiconductor chip. A first erasing layer(103) is formed on one side of the substrate(101) to be separated. A seed layer is formed on the first erasing layer, and a second erasing layer(105) is formed on the other side of the substrate to be separated. A light emitting structure is formed on the second erasing layer and the seed layer, and the second electrode layer(140) is formed on the light emitting structure. A mesa etching process is performed from a second electrode layer one of the first erasing layer and the second erasing layer.
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