| 摘要 |
A method for forming tungsten layer and a method for forming a wiring of semiconductor device using the same are provided to form a wiring having low resistance by forming a tungsten film with a first tungsten film and a second tungsten film. A Tungsten nuclear grown layer(212) having at least one of an amorphous phase and beta-phase on a semiconductor substrate is formed. A first tungsten layer(214) having an alpha-phase of crystalline on the tungsten nuclear grown layer is formed. A second tungsten layer(240) is formed according to a PVD process on a first tungsten layer, and the tungsten nuclear grown layer is formed by CVD (Chemical Vapor Deposition) process or ALD (Atomic Layer Deposition) process.
|
