发明名称 Semiconductor memory device
摘要 A write voltage source is capable of applying a write voltage, which is a high voltage. An antifuse is connected at one end to the write voltage source and has a resistance irreversibly variable based on the write voltage. A sense node is connectable to the other end of the antifuse. A sense amp compares the potential on the sense node with a reference potential. The sense node is used to accumulate charge thereon. To control the potential difference placed between both ends of the antifuse, a third transistor is provided having one end connected to the sense node. The third transistor is provided with a precharge voltage source on the other end, and a precharge controller operative to on/off control the gate.
申请公布号 US7542367(B2) 申请公布日期 2009.06.02
申请号 US20070839199 申请日期 2007.08.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUFUJI KENSUKE;ITO HIROSHI
分类号 G11C17/18 主分类号 G11C17/18
代理机构 代理人
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