| 摘要 |
A flash memory device and an erase method thereof, in which the size of a memory cell block can be selectively changed during an erase operation. The flash memory device includes a plurality of memory cell blocks, an X-decoder, and a plurality of block selection units. The X-decoder decodes block address signals, page address signals, and block size change signals in response to one of a program command, a read command, and an erase command, generates a plurality of block selection signals and word line bias voltages according to the decoding result, and outputs the word line bias voltages to a plurality of global word lines, respectively. During the erase operation, the size of an erased memory cell block is decided according to word line bias voltages output from the X-decoder. During the erase operation, at least one of the plurality of block selection units selects at least one of the plurality of memory cell blocks. Accordingly, the size of a memory cell block of a flash memory device can be changed in various ways depending on operating characteristics of products.
|
