发明名称 |
METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE |
摘要 |
Disclosed is a method for producing a silicon carbide substrate wherein a major surface on which a semiconductor layer is formed has a step-terrace structure composed of a flat terrace and a step. This method for producing a silicon carbide substrate is characterized in that the plane direction of a major surface (1) of a raw material substrate is inclined to the (0001) surface by an angle of from 0.03° to 1°, and a hydrogen gas etching is performed at 1250-1700°C. Also disclosed is an SiC substrate, which has only a few spiral pits and is excellent in surface flatness.
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申请公布号 |
KR20090055567(A) |
申请公布日期 |
2009.06.02 |
申请号 |
KR20097004829 |
申请日期 |
2009.03.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KINOSHITA HIROYUKI;SUDA JUN;KIMOTO TSUNENOBU |
分类号 |
H01L21/302;H01L21/205 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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