摘要 |
A method of manufacturing a thin film transistor array panel is provided, the method including forming a thin film transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, forming a passivation layer on the source electrode and the drain electrode, forming a photoresist film on the passivation layer, selectively etching the passivation layer using the photoresist film as a mask, forming a conductive film, and removing the photoresist film along with the conductive film disposed on the photoresist film using a CMP (chemical mechanical polishing) process to form a pixel electrode being connected to the drain electrode. |