发明名称 Method of manufacturing a thin film transistor array panel that includes using chemical mechanical polishing of a conductive film to form a pixel electrode connected to a drain electrode
摘要 A method of manufacturing a thin film transistor array panel is provided, the method including forming a thin film transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, forming a passivation layer on the source electrode and the drain electrode, forming a photoresist film on the passivation layer, selectively etching the passivation layer using the photoresist film as a mask, forming a conductive film, and removing the photoresist film along with the conductive film disposed on the photoresist film using a CMP (chemical mechanical polishing) process to form a pixel electrode being connected to the drain electrode.
申请公布号 US7541225(B2) 申请公布日期 2009.06.02
申请号 US20060332076 申请日期 2006.01.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAEK BUM-KI;KIM HYUK-JIN
分类号 H01L21/84 主分类号 H01L21/84
代理机构 代理人
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