发明名称 |
LATERAL TRENCH MOSFET WITH DIRECT TRENCH POLYSILICON CONTACT AND METHOD OF FORMING THE SAME |
摘要 |
<p>A lateral trench MOSFET includes a trench containing a device segment and a gate bus segment. The gate bus segment of the trench is contacted by a conductive plug formed in a dielectric layer overlying the substrate, thereby avoiding the need for the conventional surface polysilicon bridge layer. The conductive plug is formed in a substantially vertical hole in the dielectric layer. The gate bus segment may be wider than the device segment of the trench. A method includes forming a shallow trench isolation (STI) while the conductive material in the trench is etched.</p> |
申请公布号 |
KR20090055564(A) |
申请公布日期 |
2009.06.02 |
申请号 |
KR20097004572 |
申请日期 |
2007.08.25 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC. |
发明人 |
MA CHO CHIU;DISNEY DONALD RAY |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|