METHODS FOR ADJUSTING CRITICAL DIMENSION UNIFORMITY IN AN ETCH PROCESS

摘要

A method for efficiently controlling critical dimension uniformity in an etching process is provided to efficiently control a critical dimension by maintaining profile and dimension of features formed in an interconnecting structure after selecting a desired ratio of passivation gases for etching. A metal layer is arranged on a top part of a substrate. The substrate is provided to an etching reactor(202). A gas mixture including a passivation gas and at least one chlorine containing gas is supplied to the reactor. The metal layer is etched by using plasma formed from the gas mixture. The passivation gas includes a nitrogen gas and an unsaturated hydrocarbon gas. A ratio of the nitrogen gas and the unsaturated hydrocarbon gas is 1:3~20:1.