| 摘要 |
This semiconductor device comprises a pillar layer including a first semiconductor pillar layer of a first conductivity type and a second semiconductor pillar layer of a second conductivity type formed alternately on a first semiconductor layer. At the same depth position in the device region and the end region, a difference between an impurity concentration [cm-3] of the second semiconductor pillar layer in the device region and that of the second semiconductor pillar layer in the end region is less than plus or minus 5%. A width W11 [um] of the first semiconductor pillar layer in the device region, a width W21 [um] of the second semiconductor pillar layer in the device region, a width W12 [um] of the first semiconductor pillar layer in the end region, and a width W22 [um] of the second semiconductor pillar layer in the end region, meet the relationship of W21/W11<W22/W12.
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