发明名称 |
Mask pattern generating method |
摘要 |
Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.
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申请公布号 |
US7541117(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20070735778 |
申请日期 |
2007.04.16 |
申请人 |
SONY CORPORATION |
发明人 |
OGAWA KAZUHISA;NAKAMURA SATOMI;NAKAYAMA KOHICHI |
分类号 |
G03C5/00;G03F1/30;G03F1/68;G03F1/70;G03F9/00;H01L21/027;H01L21/82 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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