| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus which form silicon dots that have uniform particle sizes and exhibit a uniform density distribution, directly on a substrate at low temperature. SOLUTION: In a hydrogen gas is supplied into a chamber 1, provided with a silicon sputter target 30 and a substrate S. A high-frequency power is applied to the gas in the chamber 1 so that plasma is generated, such that a ratio [Si(288 nm)/Hβ] between the emission intensity Si (288 nm) of silicon atoms at a wavelength of 288 nm and the emission intensity Hβof hydrogen atoms, at a wavelength of 484 nm in plasma emission is 10.0 or lower in a plasma light emission. Silicon dots having particle sizes of 20 nm or lower are formed directly on the substrate at a lower temperature of 500°C or lower by subjecting the target 30 to a chemical sputtering of the target 30 by the plasma. COPYRIGHT: (C)2009,JPO&INPIT |
