| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, having vertical and horizontal gates, and to provide a manufacturing method therefor. <P>SOLUTION: The semiconductor device has a heavily-doped first conductive type semiconductor substrate; a lightly-doped first conductive type epitaxial layer formed on the semiconductor substrate; a plurality of second conductive type base regions, formed remote from each other in the predetermined region of the epitaxial layer; a plurality of heavily-doped first conductive type source regions formed in each of the base regions, excluding the base region in one side or both sides of an end; a plurality of heavily-doped first conductive type drain regions formed on the epitaxial layer between each of the base regions; a plurality of trenches formed through each of the source regions and the base regions; a first gate electrode formed inside each of the trenches; a field oxide film formed between each of the drain regions and the base regions; and a second gate electrode formed on the base region between each of the source regions and the drain regions. <P>COPYRIGHT: (C)2009,JPO&INPIT |
