VERTICAL-TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a vertical-type semiconductor device and to provide a method of manufacturing the same. SOLUTION: In the semiconductor device and the method of manufacturing the same, the device includes a substrate 100 of a single crystal semiconductor substance that is extended in the horizontal direction, and a plurality of interlayer dielectrics 105a to 105e on the substrate. A plurality of gate patterns 132a to 132d are each provided between adjacent lower interlayer dielectrics and adjacent upper interlayer dielectrics. A vertical channel 116 of single crystal semiconductor substance penetrating a plurality of the interlayer dielectrics and the gate patterns is extended in the vertical direction. In addition, a gate insulating film that insulates the gate patterns from the vertical channel is provided between each gate pattern and the vertical channel. COPYRIGHT: (C)2009,JPO&INPIT