| 摘要 |
<P>PROBLEM TO BE SOLVED: To correct a mask pattern with high accuracy with respect to an etching proximity effect so that a wiring pattern having a desired dimensions is formed on a substrate. <P>SOLUTION: In the method of correcting the mask pattern of a mask such that a wiring pattern having desired dimensions is formed based on a micro-fabrication process using the mask, the correction of the mask pattern with respect to the etching proximity effect is performed, before carrying out the micro-fabrication process, by use of the correction model in which a pattern size and an inter-patter space size are set as parameters. <P>COPYRIGHT: (C)2009,JPO&INPIT |
