| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate semiconductor device which can avoid a process matter and bad influence to a device caused by high density of an impurity which is introduced for reducing resistance, reduce gate resistance, and thereby contribute to the improvement of a switching rate, and its manufacturing method. SOLUTION: A gate electrode is formed by embedding a polysilicon layer in a trench and providing a conductor layer comprising a polycide layer on the upper surface of the polysilicon layer. COPYRIGHT: (C)2009,JPO&INPIT
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