发明名称 METHOD OF MANUFACTURING TANTALUM SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and to provide the method capable of stably manufacturing the target by improving and devising plastic working steps such as forging and rolling, and the heat treatment step. SOLUTION: In the tantalum sputtering target manufactured by performing plastic-working of a molten and cast tantalum ingot or billet through forging, annealing and rolling, the structure of the tantalum target comprises a non-recrystallized structure. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009114540(A) 申请公布日期 2009.05.28
申请号 JP20080311509 申请日期 2008.12.05
申请人 NIKKO KINZOKU KK 发明人 ODA KUNIHIRO;FUKUSHIMA ATSUSHI
分类号 C23C14/34;C22F1/00;C22F1/18 主分类号 C23C14/34
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