| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having improved reliability by preventing peeling between a barrier metal and a conductive layer. <P>SOLUTION: The semiconductor device X1 includes: a semiconductor substrate 10; a conductive layer 20 provided on the semiconductor substrate 10; a passivation layer 30 having a through-hole 30a on the conductive layer 20; a barrier metal 40 having one part disposed in the through-hole 30a and provided on the conductor layer 20; and a solder bump 50 joined to the barrier metal 40. The conductive layer 20 includes a first layer 21 and a second layer 22 on the first layer 21, wherein the second layer 22 has a through-hole 22c communicating to the through-hole 30a. The barrier metal 40 has a protrusion 40a extending outward from the inner peripheral surface 22c<SB>1</SB>of the through-hole 22c in the lower part of the second layer 22. <P>COPYRIGHT: (C)2009,JPO&INPIT |
