PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS

摘要

Disclosed is a process for producing a single crystal SiC substrate which can produce a single crystal SiC substrate, which does not cause significant distortion, has a large size, and has good crystallinity, at low cost using a relatively inexpensive polycrystalline SiC substrate as a base material substrate. The production process comprises a P ion implantation step of providing an SOI substrate (1) comprising a Si base material layer (2), and a surface Si layer (3) and an embedded oxide layer (4) each in a predetermined thickness formed on the Si base material layer (2) and implanting P ions from the surface Si layer (3) side into the SOIsubstrate (1) to convert the embedded oxide layer (4) to a PSG layer (6) for softening point lowering, and an SiC forming step of heating the SOI substrate (1) with the PSG layer (6) formed thereon in a hydrocarbon gas atmosphere to convert the surface Si layer (3) to SiC and then cooling the assembly to form a single crystal SiC layer (5) on the surface of the assembly.