| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of single crystal silicon carbide substrate which has been reduced in manufacturing cost more than that of prior art and is resistive to manufacture of a high quality device. SOLUTION: The manufacturing method of silicon carbide substrate is characterized in manufacturing a substrate including a single crystal layer formed on a polycrystal substrate with the steps of preparing at least for single crystal silicon carbide substrate having density of micropipe of 30 pieces/cm<SP>2</SP>or less and polycrystal silicon carbide substrate and then bonding the single crystal silicon carbide substrate and the polycrystal silicon carbide substrate, and thereafter making thinner the single crystal silicon carbide substrate. COPYRIGHT: (C)2009,JPO&INPIT
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