| 摘要 |
PROBLEM TO BE SOLVED: To provide an interlayer insulating film structure of a semiconductor device using a CF<SB>x</SB>film whose adhesion to an Si-based insulating film is improved. SOLUTION: This interlayer insulating film structure of the semiconductor device has a lower side Si-based insulating film, an upper side Si-based insulating film, and the CF<SB>x</SB>insulating film sandwiched between the lower side and the upper side Si-based insulating films and whose F composition x at the interface with the Si-based insulating film is smaller than the F composition x at the middle in the thickness direction. COPYRIGHT: (C)2009,JPO&INPIT
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