METHOD OF MAKING PROTECTIVE FILMS BASED ON HAFNIUM OXIDE

摘要

FIELD: electrical engineering. ^ SUBSTANCE: present invention relates to the technology of making semiconductor devices, particularly to methods of making protective films. The method of making protective films based on hafnium oxide involves forming a protective layer of hafnium oxide on the surface of a substrate at 350-400C from a gaseous phase, consisting of hafnium tetrachloride (HfCl4), oxygen (O2) and nitrogen oxide (NO) at molar ratio 1:1:(2.8-3.2) respectively and gas flow velocity of 15-20 l/h. ^ EFFECT: invention allows for obtaining protective hafnium oxide films at low temperatures.