发明名称 PLASMA DEPOSITION APPARATUS AND METHOD
摘要 <p>A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.</p>
申请公布号 KR100899355(B1) 申请公布日期 2009.05.27
申请号 KR20070116932 申请日期 2007.11.15
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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