METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE MOSFET,申请号EP20070826201-传众专利搜索

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发明名称	METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE MOSFET
摘要
申请公布号	EP2062289(A1)	申请公布日期	2009.05.27
申请号	EP20070826201	申请日期	2007.08.29
申请人	NXP B.V.	发明人	ROEDLE, THOMAS, C.;SVEINBJORNSSON, EINAR O.;OLAFSSON, HALLDOR O.;GUDJONSSON, GUDJON I.;ALLERSTAM, CARL F.
分类号	H01L21/04;H01L29/161	主分类号	H01L21/04
代理机构		代理人
主权项
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