Manufacturing method of thin film transistor

摘要

The invention provides a manufacturing method of a circular thin film transistor of which shape is more controlled than the conventional case, while simplifying the steps and reducing the manufacturing time and cost by forming a circular thin film transistor by a maskless process such as a droplet discharge method. In the invention, a circular thin film transistor having a circular electrode is formed by stacking concentric circular thin films over a substrate by a maskless process such as a droplet discharge method. Moreover, a circular thin film transistor having a circular semiconductor layer may be formed by stacking concentric circular thin films over a substrate by a maskless process such as a droplet discharge method.