发明名称 Charge multiplication CMOS image sensor and method for charge multiplication
摘要 A pixel for a CMOS photo sensor having a photosensitive element configured to collect charge when light strikes the photosensitive element, a charge-multiplication circuit having a first electrode, a second electrode, and a third electrode, the charge-multiplication circuit is configured to transfer the charge from the photosensitive element to the first electrode, apply a predetermined voltage to the second electrode to induce charge multiplication, transfer the charge from the first electrode to the second electrode for charge multiplication, and transfer a plurality of charge from the second electrode to the third electrode and onto a sense node, and a readout circuit coupled to the sense node, the readout circuit measures a voltage corresponding to the plurality of charge transferred to the sense node.
申请公布号 US7538307(B1) 申请公布日期 2009.05.26
申请号 US20080033786 申请日期 2008.02.19
申请人 TELEDYNE LICENSING LLC 发明人 LAUXTERMANN STEFAN
分类号 H01J40/14 主分类号 H01J40/14
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