发明名称 |
Ohmic electrode structure, compound semiconductor light emitting device having the same, and LED lamp |
摘要 |
An Ohmic electrode structure comprising a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and having a surface; and an electrode disposed on said surface of said semiconductor layer and having an Ohmic contact with said semiconductor layer, wherein at least a surface portion of said electrode which is in contact with said semiconductor layer is formed from a lanthanide element or a lanthanide element-containing alloy. A compound semiconductor light-emitting device comprising a light-emitting layer formed of a compound semiconductor may advantageously comprise the Ohmic electrode structure.
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申请公布号 |
US7538361(B2) |
申请公布日期 |
2009.05.26 |
申请号 |
US20050548192 |
申请日期 |
2005.09.07 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L27/15;H01L21/285;H01L29/26;H01L29/45;H01L31/12;H01L33/30;H01L33/38;H01L33/40 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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