METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE AND FLEXIBLE SEMICONDUCTOR DEVICE

摘要

After forming a gate electrode (20g) on a flexible substrate (10), an insulating layer (30) formed on a protective film (34) is transferred to a major surface of the flexible substrate (10) having the gate electrode (20g). Since the insulating layer (30) is pressed against the major surface of the flexible substrate (10), it is transferred onto the major surface of the flexible substrate (10) in such a manner that the gate electrode (20g) is embedded therein. Then, after making source/drain electrodes (20s, 20d) on the insulating layer (30) at positions corresponding to the gate electrode (20g), a semiconductor layer (40) is formed on the insulating layer (30) having the source/drain electrodes. A part of the insulating layer (30) on the gate electrode (20g) functions as a gate insulating film (35), while a part of the semiconductor layer (40) between the source/drain electrodes (20s, 20d) on the insulating layer (30) functions as a channel.