METHOD AND APPARATUS TO CONTROL SEMICONDUCTOR FILM DEPOSITION CHARACTERISTICS
摘要
Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
申请公布号
WO2007021692(A3)
申请公布日期
2009.05.22
申请号
WO2006US30913
申请日期
2006.08.08
申请人
APPLIED MATERIALS, INC.;CARLSON, DAVID, K.;LAM, ANDREW;HEMKAR, MANISH;SANCHEZ, ERROL;KUPPURAO, SATHEESH;BECKFORD, HOWARD
发明人
CARLSON, DAVID, K.;LAM, ANDREW;HEMKAR, MANISH;SANCHEZ, ERROL;KUPPURAO, SATHEESH;BECKFORD, HOWARD
