| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a node in an unstable state inside a semiconductor memory device when resetting the semiconductor memory device with a mode resister setting (MRS) command. SOLUTION: An initializing circuit 20B for initializing the semiconductor memory device 10 includes a command generating circuit 22A for generating a mode register setting command (MRS) in response to a command signal, an MRS control circuit 26 for outputting a reset signal in response to the mode register setting (MRS) command, and an ACT control circuit 24A for resetting the semiconductor memory device 10 by generating precharge (PALL) commands for all banks in response to the reset signal. COPYRIGHT: (C)2009,JPO&INPIT
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