| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate (SOI substrate) wherein an area of the semiconductor substrate is increased the productivity is improved. SOLUTION: The semiconductor substrate (SOI substrates) is manufactured by concurrently processing a plurality of single crystal semiconductor substrates so as to increase the area of the semiconductor substrate and also improve the productivity. In specific, a series of steps is performed using a tray with which a plurality of single crystal semiconductor substrates can be concurrently processed. Further, the single crystal semiconductor layers provided for a base substrate are subjected to etching treatment or etch-back treatment, thereby damaged regions in contact with the plurality of single crystal semiconductor layers are removed, and in addition, a depression is formed in the base substrate by removing part of a surface of the base substrate in a gap between adjacent single crystal semiconductor layers. COPYRIGHT: (C)2009,JPO&INPIT |
