| 摘要 |
A highly reliable copper interconnect structure and method of fabricating the same is provided. The interconnect structure comprises a metal layer buried between an adjacent upper copper layer and an adjacent lower copper layer structure. More specifically, the interconnect structure comprises a recess formed in a dielectric layer; a barrier metal lining sidewalls of the recess; a first copper layer within the recess; a second copper layer within the recess; and a metal layer buried between the first copper layer and the second copper layer. The method comprises forming a recess in an interlayer dielectric; forming a first copper layer, a metal layer over the first copper layer and a second copper layer over the metal layer, all within the recess. The metal layer is sandwiched between the first copper layer and the second copper layer within the recess.
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