REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a method of filling narrow-width high-aspect-ratio gaps by an HDP-VCD process. SOLUTION: A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7,500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5,000Åis deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates. COPYRIGHT: (C)2009,JPO&INPIT