| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a HOT structure capable of being put to original practical use by suppressing generation of a crystal defect at an interface of crystal regions of a functional substrate having mutually different crystal orientations when the semiconductor substrate having the HOT structure is manufactured using a DSB substrate. SOLUTION: The semiconductor substrate includes: a silicon support substrate with a first crystal orientation; a silicon functional substrate which is formed directly on the silicon support substrate and which has a first crystalline region with a crystal orientation different from the first crystal orientation of the silicon support substrate and a second crystalline region with a crystal orientation different from the first crystal orientation of the silicon support substrate; and a defect creation-preventing region between the first crystalline region and the second crystalline region so as to be at least reached to a main surface of the silicon support substrate. COPYRIGHT: (C)2009,JPO&INPIT
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