| 摘要 |
PROBLEM TO BE SOLVED: To provide a minute semiconductor device exhibiting excellent element characteristics. SOLUTION: The semiconductor device has a semiconductor substrate, an isolation region consisting of an insulator in a trench formed in the semiconductor substrate, an active region including a semiconductor region surrounded by the insulator in a trench and a single crystal silicon layer formed thereon, a gate insulating film formed on the single crystal silicon layer, a gate electrode provided on the gate insulating film across the active region, and a diffusion layer provided in the active region on the opposite sides of the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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